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Volumn 494, Issue 1, 2001, Pages 21-27
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Bond conserving rotation, adatoms and rest atoms in the reconstruction of Si(1 1 0) and Ge(1 1 0) surfaces: A first principles study
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Author keywords
Density functional calculations; Germanium; Low index single crystal surfaces; Semiconducting surfaces; Silicon
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Indexed keywords
BUCKLING;
CHEMICAL BONDS;
CHEMICAL RELAXATION;
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
GERMANIUM;
SILICON;
SINGLE CRYSTALS;
SURFACE PHENOMENA;
ADATOM STRUCTURES;
BOND CONSERVING ROTATIONS;
SURFACE RECONSTRUCTIONS;
SURFACE STRUCTURE;
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EID: 0035841367
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)01465-0 Document Type: Article |
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Times cited : (20)
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References (30)
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