Noise properties of the spin-valve transistor

Sensors and Actuators, A: Physical

Volumn 91, Issue 1-2, 2001, Pages 192-195

  Van't Erve, O M J ^a   Anil Kumar, P S ^a   Jansen, R ^a   Kim, S D ^a   Vlutters, R ^a   Lodder, J C ^a   Smits, A A ^b   De Jonge, W J M ^b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Hot electron; Metal base transistor; Noise; Schottky barrier; Spin valve

Indexed keywords

ELECTRON MOBILITY; MAGNETIC FIELD EFFECTS; MULTILAYERS; PLATINUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; WHITE NOISE;

HOT ELECTRON; METAL BASE TRANSISTOR; SPIN-VALVE TRANSISTOR;

TRANSISTORS;

EID: 0035811391     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(01)00616-1     Document Type: Article

References (10)

1. Low-field magnetocurrent above 200% in a spin-valve transistor at room temperature
2. Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor
3. 1/f noise in anisotropic and giant magnetoresistive elements
4. Comparison of flicker noise in single layer, AMR and GMR sandwich magnetic film devices
5. Electrical noise in hysteretic ferromagnet-insulator-ferromagnet tunnel junctions
6. The electrical and magnetic response of yoke-type read heads based on a magnetic tunnel junction
7. Electronic noise in magnetic tunnel junctions
8. 3
9. Local noise analysis of a Schottky contact: Combined thermionic-emission-diffusion theory
10. Development of the spin-valve transistor