메뉴 건너뛰기




Volumn 78, Issue 10, 2001, Pages 1370-1372

Roughening transition and solid-state diffusion in short-period InP/In0.53Ga0.47As superlattices

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035809586     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1353839     Document Type: Article
Times cited : (3)

References (18)
  • 3
    • 4243826562 scopus 로고
    • M. S. Hybertsen, Phys. Rev. Lett. 64, 555 (1990); J. Vac. Sci. Technol. B 8, 773 (1990).
    • (1990) J. Vac. Sci. Technol. B , vol.8 , pp. 773
  • 9
    • 0000910570 scopus 로고
    • U. Bangert, A. J. Harvey, C. Dieker, and H. Hartdegen, Appl. Phys. Lett. 69, 2101 (1996); J. Appl. Phys. 78, 811 (1995).
    • (1995) J. Appl. Phys. , vol.78 , pp. 811
  • 15
    • 0040194508 scopus 로고    scopus 로고
    • note
    • The XRD results and modelling of Ref. 1 demonstrates that the average strain in the QW of an InP/InGaAs SL is well approximated by averaging the strain of the single interfacial InAs monolayers over the whole InGaAs QW.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.