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Volumn 328, Issue 1-2, 2001, Pages 218-221
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Microdefects and nonstoichiometry level in GaAs:Si/GaAs films grown by liquid-phase epitaxy method
a a a a a |
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Author keywords
GaAs; Nonstoichiometry; Si GaAs films; Spectrometry
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Indexed keywords
COMPOSITION;
CRYSTAL ATOMIC STRUCTURE;
FILM GROWTH;
LIGHT REFLECTION;
LIQUID PHASE EPITAXY;
POINT DEFECTS;
PRECIPITATION (CHEMICAL);
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
SPECTRUM ANALYSIS;
STOICHIOMETRY;
X RAY DIFFRACTION ANALYSIS;
ELECTROPHYSICAL PARAMETERS;
THIN FILMS;
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EID: 0035807511
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-8388(01)01297-X Document Type: Article |
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Times cited : (3)
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References (6)
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