Nonclassical behavior in the capacitance of a nanojunction

Physical Review Letters

Volumn 86, Issue 23, 2001, Pages 5321-5324

  Hou, J G ^a   Wang, Bing ^a,b   Yang, Jinlong ^a   Wang, X R ^b   Wang, H Q ^a   Zhu, Qingshi ^a   Xiao, Xudong ^b  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; GOLD; MONOLAYERS; PERMITTIVITY; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; TUNNEL JUNCTIONS;

LOCAL PARTIAL DENSITY OF STATES (LPDOS);

NANOSTRUCTURED MATERIALS;

EID: 0035805931     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.86.5321     Document Type: Article

References (16)