Preface to the viewpoint set on: Dislocation mobility in silicon

Scripta Materialia

Volumn 45, Issue 11, 2001, Pages 1233-1238

  George, Amand ^b   Yip, Sidney ^b  

^a CNRS   (France)

^b NONE

Author keywords

Core structure; Dislocation mobility; Experiments; Kink mechanism; Modeling; Silicon

Indexed keywords

ACTIVATION ENERGY; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); MICROSTRUCTURE; NUCLEATION; PLASTIC DEFORMATION; PLASTICITY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; STRAIN MEASUREMENT; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

DOPANT EFFECTS; KINK MECHANISM;

SEMICONDUCTING SILICON;

EID: 0035802669     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6462(01)01155-1     Document Type: Editorial

References (6)

1. Extended defects in semiconductors
2. Dislocations