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Volumn 395, Issue 1-2, 2001, Pages 225-229
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Fundamental properties of ECR plasma CVD and hydrogen-induced low temperature Si epitaxy
a
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Author keywords
ECR plasma CVD; Etching; Hydrogen; Low temperature epitaxial growth
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Indexed keywords
AMORPHOUS SILICON;
ELECTRON CYCLOTRON RESONANCE;
EPITAXIAL GROWTH;
GLASS;
LOW TEMPERATURE EFFECTS;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMA ETCHING;
POLYSILICON;
SILICON;
SINGLE CRYSTALS;
LOW TEMPERATURE EPITAXIAL GROWTH;
FILM GROWTH;
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EID: 0035801168
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(01)01275-5 Document Type: Conference Paper |
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Times cited : (9)
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References (17)
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