Highly conducting doped microcrystalline silicon (μc-Si:H) at very low substrate temperature by Cat-CVD

Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 202-205

  Dusane, R O ^b   Diehl, Frank ^a   Weber, U ^a   Schroder B ^a  

^a Rheinland Pfälzische Technische Universität Kaiserslautern Landau   (Germany)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Amorphous materials; Chemical vapor deposition; Deposition process; Microcrystalline

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HYDROGENATION; LIGHT TRANSMISSION; LOW TEMPERATURE EFFECTS; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILANES; SPECTRUM ANALYSIS; THERMAL CONDUCTIVITY;

MICROCRYSTALLINE SILICON;

SEMICONDUCTING FILMS;

EID: 0035800982     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01273-1     Document Type: Conference Paper

References (13)

1. Hydrogenated amorphous silicon alloy deposition processes