Emission characteristics of a gallium arsenide wedge emitter monolithically fabricated with an air bridge and a cantilever anode

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 2001, Pages 129-130

  Mimura, H ^a   Yilmazoglu, O ^b   Shimawaki, H ^a   Yokoo, K ^a   Mutamba, K ^b   Hartnagel, H ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON EMISSION; ELECTRON TUNNELING; ELECTROSTATICS; MICROMACHINING; SEMICONDUCTING GALLIUM ARSENIDE; THRESHOLD VOLTAGE;

BRIDGE EMITTER; CANTILEVER ANODE; ELECTROSTATIC FORCE; GALLIUM ARSENIDE WEDGE EMITTER;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035784893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. H. Mimura et al., IVMC 2000 p.234.
2. W. Kang et al., IEEE ED Lett. (1998) 379.