Transport-limited emission from carbon nanotubes

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 2001, Pages 45-46

  Shaw, J L ^a   Hsu, D S Y ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON DEVICE MANUFACTURE; ELECTRON EMISSION; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; SILICON; SUBSTRATES; TEMPERATURE; THRESHOLD VOLTAGE;

CARBON NANOTUBE EMISSION PROPERTIES; GATED MULTIWALL CARBON NANOTUBES; TRANSPORT LIMITED EMISSION;

CARBON NANOTUBES;

EID: 0035784579     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. D. S. Y. Hsu and J. L. Shaw, these proceedings.
2. J. L. Shaw, J. Vac. Sci. Technol. B 18, 1817 (2000).
3. P. G. Collins et al., Phys. Rev. Lett. 86, 2138 (2001).
4. J. L. Shaw, Mat. Res. Soc. Symp. Proc. 621, R3.4.1 (2000).