The effect of annealing temperature on the electron emission characteristics of silicon tips coated with Ba0.67Sr0.33TiO3 thin film

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 2001, Pages 119-120

  Kang, W P ^a   Wisitsora At, A ^a   Davidson, J L ^a   Tan, O K ^b   Zhu, W G ^b   Li, Q ^c   Xu, J F ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BARIUM COMPOUNDS; CARRIER CONCENTRATION; CHEMICAL ACTIVATION; COATING TECHNIQUES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; FERMI LEVEL; FERROELECTRIC THIN FILMS; IONIC CONDUCTION; THERMAL EFFECTS;

CONDUCTION BAND; CONDUCTION MECHANISM; FOWLER-NORDHIEM PLOTS; SPACE CHARGE LIMITED INJECTION CURRENT;

SILICON;

EID: 0035784564     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)