Fabrication of low voltage gated microtip arrays with low work function Cu-Li alloy or amorphous diamond coatings and comparison of field emission properties

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 2001, Pages 99-100

  Auciello, O ^a   Tucek, J C ^a   Sumant, A ^a   Carlisle, J A ^a   Gruen, D M ^a   Ding, M Q ^a   Angadi, M ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ASPECT RATIO; COPPER ALLOYS; DIAMONDS; ELECTRIC POTENTIAL; ELECTRON EMISSION; ENERGY DISPERSIVE SPECTROSCOPY; FIELD EMISSION CATHODES; SPUTTER DEPOSITION;

AMORPHOUS DIAMOND COATINGS; FIELD EMISSION PROPERTIES; FOWLER-NORDHEIM BEHAVIOR; HIGH DENSITY ARRAY; LOW VOLTAGE GATED MICROTIP ARRAYS; THRESHOLD FIELD EMISSION;

ELECTRON DEVICE MANUFACTURE;

EID: 0035784316     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)