Emission characteristics and in-situ TEM observation of Si lateral field emitters

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 2001, Pages 237-238

  Hashiguchi, G ^e   Kakushima, K ^a,b   Endo, J ^c   Wada, Y ^c   Mimura, H ^d   Yokoo, K ^d   Fujita, H ^a,b  

^a KAGAWA UNIVERSITY   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c HITACHI LTD   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; ELECTRON EMISSION; INDUCTIVELY COUPLED PLASMA; MICROMACHINING; OXIDATION; REACTIVE ION ETCHING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EMISSION CURRENT; FOWLER-NORDHEIM RELATION; SILICON LATERAL FIELD EMITTERS;

FIELD EMISSION DISPLAYS;

EID: 0035784269     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)

1. Hyung-II Lee et. al., J. Vac. Sci. Technol. B16(2), (1998) 762.