Carbon nanotube cathode with low operating voltage

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

Volumn , Issue , 2001, Pages 31-32

  Jo, S H ^a   Jung, K W ^a   Kim, Y J ^a   Ahn, S H ^a   Kang, J H ^a   Han, H S ^a   Lee, B G ^a   Cha, J C ^a   Lee, S J ^a   Park, S Y ^a   Lee, C G ^a   You, J H ^a   Lee, N S ^a,b   Kim, J M ^a,b  

^a Samsung SDI   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON DEVICE MANUFACTURE; ELECTRON EMISSION; ELECTRONIC PROPERTIES; FIELD EMISSION CATHODES; STRUCTURE (COMPOSITION); THRESHOLD VOLTAGE; VACUUM;

GATED CATHODE; STRUCTURAL PROPERTIES; VACUUM CHAMBER;

CARBON NANOTUBES;

EID: 0035784237     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Iijima: Nature 354 (1991) 56.
2. W. B. Choi, et al., Appl. Phys. Lett. 75 (1999) 3129.
3. J. M. Kim, et al., Dia. Rel. Mater. 9 (2000) 1184.
4. N.S. Lee, et al., Diamond & Related Materials, 10 (2001) 265.