Layer-growth of tantalum nitrides by nitridation of Ta metal: The basis of the preparation of a well-characterised nitrogen standard material

Defect and Diffusion Forum

Volumn , Issue 194-199 PART 2, 2001, Pages 1613-1618

  Dopita, M ^a,b   Wollein, B ^b   Rafaja, D ^a   Gruner, W ^c   Lengauer, W ^b  

^a CHARLES UNIVERSITY   (Czech Republic)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^c IFW DRESDEN   (Germany)

Author keywords

Nitrides; Nitrogen Analysis; Solid State Diffusion; TaN

Indexed keywords

ANNEALING; DIFFUSION; HIGH TEMPERATURE EFFECTS; NITRIDES; NITROGEN; PHASE COMPOSITION; PHASE DIAGRAMS; PHASE EQUILIBRIA;

CARRIER GAS HOT EXTRACTION (CGHE); ELECTRON PROBE MICROANALYSIS (EPMA);

TANTALUM COMPOUNDS;

EID: 0035780515     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.194-199.1613     Document Type: Article

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