메뉴 건너뛰기




Volumn 4562 II, Issue , 2001, Pages 561-570

Dry etching characteristics of attenuated phase-shifting masks using Cl2/CF4/O2/He plasmas

Author keywords

Anisotropy; Att. PSM; Cl2; ICP; MoSiON

Indexed keywords

ANISOTROPY; CHLORINE; DRY ETCHING; ELECTROMAGNETIC WAVE ATTENUATION; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; MOLYBDENUM COMPOUNDS; PHASE SHIFT; SURFACE ROUGHNESS;

EID: 0035763976     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458335     Document Type: Article
Times cited : (3)

References (11)
  • 2
    • 0035043125 scopus 로고    scopus 로고
    • Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads-part III
    • C. Constantine, R. Westermann, J. Plumhoff, Plasma Etch of Binary Cr Masks: CD Uniformity Study of Photomasks Utilizing Varying Cr Loads-Part III, Proc. SPIE vol. 4186(2001) p. 85.
    • (2001) Proc. SPIE , vol.4186 , pp. 85
    • Constantine, C.1    Westermann, R.2    Plumhoff, J.3
  • 6
    • 0002020707 scopus 로고    scopus 로고
    • Mechanism for anisotropic etching of photoresist-masked, polycrystalline silicon in HBr plasmas
    • C.C. Cheng, K.V. Guinn, and V.M. Donnelly, "Mechanism for anisotropic etching of photoresist-masked, polycrystalline silicon in HBr plasmas" J. Vac. Sci. Technol. B14(1) (1996) p. 85.
    • (1996) J. Vac. Sci. Technol , vol.B14 , Issue.1 , pp. 85
    • Cheng, C.C.1    Guinn, K.V.2    Donnelly, V.M.3
  • 9
    • 0033728981 scopus 로고    scopus 로고
    • Cl2-based dry etching of GaN and InGaN using inductively coupled plasma
    • Ji-Myon Lee, Ki-Myung Chang, In-Hwan Lee, and Seong-Ju Park, "Cl2-Based Dry Etching of GaN and InGaN Using Inductively Coupled Plasma," J. Electrochem. Soc. 147(5), (2000) p. 1860.
    • (2000) J. Electrochem. Soc. , vol.147 , Issue.5 , pp. 1860
    • Lee, J.-M.1    Chang, K.-M.2    Lee, I.-H.3    Park, S.-J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.