Extended chamber matching and repeatability study for chrome etch

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4562 II, Issue , 2001, Pages 624-632

  Huang, Yi Chiau ^a   Buie, Melisa ^a   Stoehr, Brigitte ^a   Buxbaum, Alex ^a   Ruhl, Guenther ^b  

^a APPLIED MATERIALS INC   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Chrome; Cr etch; Endpoint detection; OES; Optical emission spectroscopy; Photomask etch; Plasma etch

Indexed keywords

CALIBRATION; DRY ETCHING; LIGHT EMISSION; PHASE SHIFT; PHOTORESISTS; SPECTRUM ANALYSIS;

ENDPOINT DETECTION;

MASKS;

EID: 0035763874     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.458344     Document Type: Article

References (3)

1. M.E. Welch, P.E. Luscher, Z. Sui, and B. Lee, "Breaking the 0.5% exposed area etch endpoint barrier," Semiconductor International, 18, 269, 1996.
2. M.J. Buie, B. Stoehr, A. Buxbaum, and G. Ruhl, "An endpoint solution for photomask chrome loads down to 0.25%," submitted to BACUS, 2001.
3. S. Xu, Z, Sun, Z, Qian, J. Holland, and D. Podlesnik, "Characteristics and mechanism of etch process sensitivity to chamber surface condition," J. Vac. Sci. Technol. B, 19, 166, 2001.