White light-emitting diodes with phase-separated InGaN active layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4445, Issue , 2001, Pages 93-98

  Moon, Yong Tae ^a   Kim, Dong Joon ^a   Park, Jin Sub ^a   Oh, Jeong Tak ^a   Park, Nae Man ^a   Kim, Tae Soo ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

InGaN; Luminescence; Phase separation; White LED; White light

Indexed keywords

FILM GROWTH; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TERNARY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY;

WHITE LIGHT;

LIGHT EMITTING DIODES;

EID: 0035759545     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.450028     Document Type: Conference Paper

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