Exposure latitude requirements for high yield with photon flux-limited laser sources

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 534-543

  OBrien, Sean C ^a   Mason, Mark E ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

157; 193; Defect density; EUV; Exposure latitude; Photons; Poisson; Shot noise; Yield

Indexed keywords

IMAGING SYSTEMS; LASER APPLICATIONS; LIGHT SOURCES; MATHEMATICAL MODELS; PHOTONS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SHOT NOISE; STATISTICS;

LASER PHOTON FLUENCES;

PHOTOLITHOGRAPHY;

EID: 0035758337     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.435780     Document Type: Conference Paper

References (3)

1. N. Rau et al, "Shot-Noise and Edge Roughness Effects in Resists Patterned at 10 nm Exposure", International Conf. On Electron, Ion, Photon Beam Technology and Nanofabrication, 1998.
2. T Everhart, Materials for Microlithography - Radiation-Senstive Polymers, L. F. Thompson, D. G. Willson, J. M. J. Frechet, eds., ACS Symposium Series 266, American Chemical Society, Washington DC, 1984.
3. Mischa Schwartz, Information Transmission, Modulation And Noise, 4th ed, McGraw Hill, 1990.