Model based OPC for 1st generation 193 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4346, Issue 1, 2001, Pages 119-130

  Lucas, Kevin ^a   Word, James ^b   Vandenberghe, Geert ^b   Verhaegen, Staf ^b   Jonckheere, Rik ^b  

^a MOTOROLA INC   (United States)

^b IMEC   (Belgium)

Author keywords

130 nm device generation; 193 nm lithography; Model based OPC

Indexed keywords

COMPUTER AIDED SOFTWARE ENGINEERING; COMPUTER SIMULATION; COMPUTER SOFTWARE; ETCHING; LIGHTING; OPTICAL DESIGN; SEMICONDUCTOR DEVICE MANUFACTURE;

OPTICAL PROXIMITY CORRECTIONS (OPC);

PHOTOLITHOGRAPHY;

EID: 0035758307     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.435670     Document Type: Article

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