UV detection properties of epitaxial 6H-SiC diodes with oxide ramp termination

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2001, Pages 345-348

  Brezeanu, G ^a   Badila, M ^a   Godignon, P ^a   Millan, J ^a   Udrea, F ^a   Mihaila, A ^a   Amaratunga, G ^a   Rebollo, J ^a   Enache, I ^a  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; EVAPORATION; ION IMPLANTATION; OXIDES; QUANTUM EFFICIENCY; SCHOTTKY BARRIER DIODES; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

EPITAXIAL SILICON CARBIDE DIODES; OXIDE RAMP TERMINATION; PHOTORESPONSE;

SILICON CARBIDE;

EID: 0035744650     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)