Investigation on operation of silicon power devices in the breakdown region of electrical characteristic

Proceedings of the International Semiconductor Conference, CAS

Volumn 2, Issue , 2001, Pages 485-488

  Obreja, Vasile V N ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; FAILURE ANALYSIS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; TEMPERATURE;

POWER DISSIPATION; SILICON POWER DEVICES;

MOS DEVICES;

EID: 0035744164     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. On the leakage current of present-day manufactured semiconductor junctions
2. The effect of charge in junction termination extension passivation dielectrics