-
1
-
-
0031556695
-
High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
-
Carrano, J. C., T. Li, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and J. C. Campbell. 1997. High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers. Electron. Lett. 33:1980–1981.
-
(1997)
Electron. Lett
, vol.33
, pp. 1980-1981
-
-
Carrano, J.C.1
Li, T.2
Grudowski, P.A.3
Eiting, C.J.4
Dupuis, R.D.5
Campbell, J.C.6
-
2
-
-
0032473617
-
Low dark current p-i-n ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition
-
Carrano, J. C., T. Li, P. A. Grudowski, C. J. Eiting, D. Lambert, J. D. Schaub, R. D. Dupuis, and J. C. Campbell. 1998. Low dark current p-i-n ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition. Electron. Lett. 34:692–694.
-
(1998)
Electron. Lett
, vol.34
, pp. 692-694
-
-
Carrano, J.C.1
Li, T.2
Grudowski, P.A.3
Eiting, C.J.4
Lambert, D.5
Schaub, J.D.6
Dupuis, R.D.7
Campbell, J.C.8
-
3
-
-
0026202720
-
Resonant cavity-enhanced (RCE) photodetectors
-
Kishino, K., M. S. Ünlü, J.-I. Chyi, J. Reed, L. Arsenault, and H. Morkoç. 1991. Resonant cavity-enhanced (RCE) photodetectors. IEEE J. Quantum Electron. 27:2025–2034.
-
(1991)
IEEE J. Quantum Electron
, vol.27
, pp. 2025-2034
-
-
Kishino, K.1
Chyi, J.-I.2
Reed, J.3
Arsenault, L.4
Morkoç, H.5
-
5
-
-
0030653282
-
Growth of GaN thin films on sapphire substrate by low pressure MOCVD
-
C. R. Abernathy, H. Amano, and J. C. Zolper, Pittsburgh, PA: Materials Research Society
-
Ishida, M., T. Hashimoto, T. Takayama, O. Imafuji, M. Yuri, A. Yoshikawa, K. Itoh, Y. Terakoshi, T. Sugino, and J. Shirafuji. 1997. Growth of GaN thin films on sapphire substrate by low pressure MOCVD. In Gallium nitride and related materials II, eds. C. R. Abernathy, H. Amano, and J. C. Zolper. 69–74. Pittsburgh, PA: Materials Research Society.
-
(1997)
Gallium Nitride and Related Materials II
, pp. 69-74
-
-
Ishida, M.1
Hashimoto, T.2
Takayama, T.3
Imafuji, O.4
Yuri, M.5
Yoshikawa, A.6
Itoh, K.7
Terakoshi, Y.8
Sugino, T.9
Shirafuji, J.10
-
6
-
-
0031117377
-
Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0001)
-
Vennegues, P., B. Beaumont, M. Vaille, and P. Gibart. 1997. Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0001). J. Crystal Growth 173:249–259.
-
(1997)
J. Crystal Growth
, vol.173
, pp. 249-259
-
-
Vennegues, P.1
Beaumont, B.2
Vaille, M.3
Gibart, P.4
-
7
-
-
0027628480
-
Room-temperature low-threshold surface-stimulated emission by optical pumping from Al0.1Ga0.9N/GaN double heterostructure
-
Amano, H., N. Watanabe, N. Koide, and I. Akasaki. 1993. Room-temperature low-threshold surface-stimulated emission by optical pumping from Al0.1Ga0.9N/GaN double heterostructure. Jpn. J. Appl. Phys. Pt. 232:L1000–1002.
-
(1993)
Jpn. J. Appl. Phys. Pt
, vol.232
, pp. L1000-L1002
-
-
Amano, H.1
Watanabe, N.2
Koide, N.3
Akasaki, I.4
-
9
-
-
85023812837
-
-
Measurement of absorption coefficient of MOCVD-grown GaN to be published
-
Tober, R. T., T. Li, J. C. Carrano, C. J. Eiting, P. A. Grudowski, R. D. Dupuis, and J. C. Campbell. Measurement of absorption coefficient of MOCVD-grown GaN to be published.
-
-
-
Tober, R.T.1
Li, T.2
Carrano, J.C.3
Eiting, C.J.4
Grudowski, P.A.5
Dupuis, R.D.6
Campbell, J.C.7
-
11
-
-
0000969646
-
Optical properties of hexagonal GaN
-
Kawashima, T., H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka. 1997. Optical properties of hexagonal GaN. J. Appl. Phys. 82:3528–3535.
-
(1997)
J. Appl. Phys
, vol.82
, pp. 3528-3535
-
-
Kawashima, T.1
Yoshikawa, H.2
Adachi, S.3
Fuke, S.4
Ohtsuka, K.5
-
12
-
-
1842724516
-
Optical constants of epitaxial AlGaN films and their temperature dependence
-
Brunner, D., H. Angerer, E. Bustarret, R. Höpler F. Freudenberg, R. Dimitrov, O. Ambacher, and M. Stutzmann. 1997. Optical constants of epitaxial AlGaN films and their temperature dependence. J. Appl. Phys. 82:5090–5096.
-
(1997)
J. Appl. Phys
, vol.82
, pp. 5090-5096
-
-
Brunner, D.1
Angerer, H.2
Bustarret, E.3
Höpler, R.4
Freudenberg, F.5
Dimitrov, R.6
Ambacher, O.7
Stutzmann, M.8
-
13
-
-
0001653914
-
Transmittance and reflectance of syztems of thin and thick layers. Opt
-
Gabriel, C. J., and A. Nedoluha. 1971. Transmittance and reflectance of syztems of thin and thick layers. Opt. Acta 18:415–423.
-
(1971)
Acta
, vol.18
, pp. 415-423
-
-
Gabriel, C.J.1
Nedoluha, A.2
-
15
-
-
0029636145
-
AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs
-
Fritz, I. J., and T. J. Drummond. 1995. AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs. Electron. Lett. 31:68–69.
-
(1995)
Electron. Lett
, vol.31
, pp. 68-69
-
-
Fritz, I.J.1
Drummond, T.J.2
-
16
-
-
0001780111
-
P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition
-
Eiting, C. J., P. A. Grudowski, and R. D. Dupuis. 1998. P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition. J. Electron. Mater. 27:206–209.
-
(1998)
J. Electron. Mater
, vol.27
, pp. 206-209
-
-
Eiting, C.J.1
Grudowski, P.A.2
Dupuis, R.D.3
-
17
-
-
0030156733
-
A study of parasitic reactions between NH3 and TMGa or TMAl
-
Chen, C. H., H. Liu, D. Steigerwald, W. Imler, C. P. Kuo, M. G. Craford, M. Ludowise, S. Lester, and J. Amano. 1996. A study of parasitic reactions between NH3 and TMGa or TMAl. J. Electron. Mater. 25:1004–1008.
-
(1996)
J. Electron. Mater
, vol.25
, pp. 1004-1008
-
-
Chen, C.H.1
Liu, H.2
Steigerwald, D.3
Imler, W.4
Kuo, C.P.5
Craford, M.G.6
Ludowise, M.7
Lester, S.8
Amano, J.9
-
18
-
-
0018211121
-
Scattering by all-dielectric multilayer bandpass filters and mirrors for lasers
-
G. Hass and M. H. Francombe, New York: Academic Press
-
Eastman, J. M. 1978. Scattering by all-dielectric multilayer bandpass filters and mirrors for lasers. In Physics of thin films, Vol. 10, eds. G. Hass and M. H. Francombe. 167–226. New York: Academic Press.
-
(1978)
Physics of Thin Films
, vol.10
, pp. 167-226
-
-
Eastman, J.M.1
|