Application determinance of single-event transient characteristics in the LM111 comparator

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1855-1858

  Sternberg, A L ^a   Massengill, L W ^a   Schrimpf, R D ^a   Calvel, P ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b THALES ALENIA SPACE   (France)

Author keywords

Analog; Circuit; Comparator; LM111; Simulation; Single event transient (SET)

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE; FLIP FLOP CIRCUITS; INTEGRATED CIRCUITS; TRANSISTORS;

SINGLE EVENT TRANSIENT (SET);

COMPARATOR CIRCUITS;

EID: 0035725674     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983142     Document Type: Conference Paper

References (11)

1. Single-event effects in analog and mixed-signal integrated circuits
2. A model for single-event transients in comparators
3. Heavy ion and proton induced single event transients in comparators
4. Analysis of single-event transients in analog circuits
5. Characterizing single-event transients in a voltage comparator (LM119)
6. Single event upset (SEU) sensitivity dependence of linear integrated circuits (IC's) on bias conditions
7. Critical charge for single event transients in bipolar linear circuits
8. Alpha particle sensitive test SRAMs
9. Observation of single event upsets in analog microcircuits