Integrated low-noise low-power fast charge-sensitive preamplifier for avalanche photodiodes in JFET-CMOS technology

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 II, 2001, Pages 2370-2374

  Pichler, Bernd J ^a,b   Pimpl, Wendelin ^c   Buttler, Werner ^d   Kotoulas, Leonidas ^b   Böning, Guido ^a,c   Rafecas, Magdalena ^a,b   Lorenz, Eckart ^c   Ziegler, Sibylle I ^a,b  

^a IEEE   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^d Ingenieurbüro Buttler   (Germany)

Author keywords

Avalanche photodiode (APD); Charge sensitive preamplifier; Junction field effect transistor (JTET) CMOS; Low noise preamplifier

Indexed keywords

CHARGE-SENSITIVE PREAMPLIFIER; JUNCTION FIELD EFFECT TRANSISTOR-CMOS; LOW-NOISE PREAMPLIFIER;

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; JUNCTION GATE FIELD EFFECT TRANSISTORS; MICROPROCESSOR CHIPS; PERFORMANCE; PHOTOMULTIPLIERS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

AVALANCHE DIODES;

EID: 0035724144     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983270     Document Type: Conference Paper

References (9)

1. Some studies of avalanche photodiode readout of fast scintillators
2. Fast readout of plastic and crystal scintillators by avalanche photodiodes
3. Field effect transistors for charge amplifiers
4. The field-effect transistor-its characteristics and applications
5. Low-noise techniques in detectors
6. A power-efficient, low-noise, wideband, integrated CMOS preamplifier for LSO/APD PET systems
7. A fast low-noise amplifier cable driver combination
8. JFET-CMOS microstrip frontend
9. A 32-channel LSO matrix coupled to a monolithic 4 × 8 APD array for high resolution PET