SEU induced by pions in memories from different generations

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 1960-1965

  Duzellier, S ^a   Falguere D ^a   Tverskoy, M ^b   Ivanov, E ^b   Dufayel, R ^c   Calvet, M C ^c  

^a ONERA   (France)

^b PETERSBURG NUCLEAR PHYSICS INSTITUTE   (Russian Federation)

^c AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

Pions; Prediction; Protons; Upsets

Indexed keywords

DYNAMIC RANDOM ACCESS STORAGE; MATHEMATICAL MODELS; PROTON IRRADIATION; STATIC RANDOM ACCESS STORAGE;

SINGLE EVENT UPSET (SEU);

NUCLEAR PHYSICS;

EID: 0035720527     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983157     Document Type: Conference Paper

References (19)

1. Single-event effects in avionics
2. Terrestrial cosmic rays
3. Measurements of the SEU environment in the upper atmosphere
4. Altitude and latitude variations in avionics SEU and atmospheric neutron flux
5. Light-hadron induced SER and scaling relations for 16 and 64 Mb drams
6. Pion-induced soft upsets in 16 Mbit DRAM chips
7. The relative efficiency of soft-error induction in 4K static RAM's by muons and pions
8. Meson interactions in NMOS and CMOS static RAMs
9. The potential of the radiation effects investigations on the accelerator facilities at Gatchina
10. Space radiation evaluation of 16Mbits DRAM's for mass memory applications
11. Heavy ion/proton test results on high integrated memories
12. SEE in-flight measurement on the MIR orbital station
13. EXEQ II et EXEQ III: Expérience embarquées pour l'étude des événements singuliers
14. Low energy proton induced SEE in memories
15. EXEQ I-IV: SEE in-flight measurement on the MIR orbital station
16. Two parameter model for predicting SEU rate
17. A simple approach to SEU cross section evaluation
18. Nuclear physics of cosmic ray interaction with semiconductor materials: Particle-induced soft errors from physicist's perspective
19. Using a carbon beam as probe to extract the thickness of sensitive volumes