A 0.13 μm logic-based embedded DRAM technology with electrical fuses, Cu interconnect in SILK™, sub-7ns random access time and its extension to the 0.10 μm generation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 407-410

  Klee, V ^a   Norum, J ^a   Weaver, R ^a   Iyer, S S K ^a   Kothandaraman, C R ^a   Chiou, J ^a   Chen, M ^a   Kusaba, N ^a   Lasserre, S ^a   Liang, C ^a   Liu, J ^a   Lu, A ^a   Parries, P R ^a   Park, B J ^a   Rice, J ^a   Robson, N ^a   Shum, D ^a   Khan, B ^a   Liu, Y ^a   Sierkowski, A ^a   Waskiewiscz, C ^a   Wensley, P ^a   Wu, T ^a   Yan, J ^a   Iyer, S S ^a   more..

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DYNAMIC RANDOM ACCESS STORAGE; EMBEDDED SYSTEMS; LOGIC DESIGN; MICROELECTRONIC PROCESSING; RANDOM PROCESSES; TIME SERIES ANALYSIS;

ELECTRICAL FUSES; LOGIC BASED EMBEDDED TECHNOLOGY; RANDOM ACCESS TIME;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035717575     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)