Impact of rapid thermal annealing on data retention time for 256 Mb and 1 Gb DRAM technology

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 399-402

  Kim, D C ^a   Park, S K ^a   Hong, H S ^a   Kim, I G ^a   Kim, Y T ^a   Kim, Y B ^a   Kim, H S ^a   Park, H S ^a   Nam, M H ^a   Suh, M S ^a   Nam, K B ^a   Lee, J S ^a   Kim, N S ^a   Lee, T K ^a   Kim, J Y ^a   Lee, S H ^a   Lee, B C ^a   Kwon, H Y ^a   Choi, J H ^a   Om, J C ^a   Wi, B R ^a   Hong, S J ^a   Kim, H R ^a   Oh, C S ^a   more..

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DESIGN FOR TESTABILITY; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE MEASUREMENT; RAPID THERMAL ANNEALING; SEMICONDUCTOR STORAGE;

BORON PHOSPHOROUS SILICATE GLASS FLOW ANNEALING; DATA RETENTION TIME; THERMALLY INDUCED STRESS;

SEMICONDUCTOR DEVICE TESTING;

EID: 0035716241     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979521     Document Type: Article

References (7)