A highly manufacturable, low-thermal budget, void and seam free pre-metal-dielectric process using new SOG for beyond 60nm DRAM and other devices

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 271-274

  Goo, Juseon ^a   Hong, Eunkee ^a   Kim, Hong Gun ^a   Kim, Hyun Jo ^a   Baek, Eun Kyung ^a   Park, Sun Hoo ^a   Lee, Jubum ^a   Lee, Hyeon Deok ^a   Kang, Ho Kyu ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC RESISTANCE MEASUREMENT; ETCHING; INTEGRATED CIRCUIT MANUFACTURE; NANOTECHNOLOGY; SEMICONDUCTOR DEVICE TESTING; SPIN GLASS;

LOW THERMAL BUDGET PROCESS; SEAM FREE PRE-METAL DIELECTRIC PROCESS; VOID FREE PRE-METAL DIELECTRIC PROCESS; WET ETCH RESISTANCE;

VLSI CIRCUITS;

EID: 0035715087     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Fluid dynamics learned with ilustration