High-fill-factor, burst-frame-rate charge-coupled device

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 567-570

  Reich, R K ^a   O'Mara, D M ^a   Young, D J ^a   Loomis, A H ^a   Rathman, D D ^a   Craig, D M ^a   Watson, S A ^b   Ulibarri, M D ^b   Kosicki, B B ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; IMAGE SENSORS; OPTICAL SHUTTERS; OPTOELECTRONIC DEVICES; PHOTOSENSITIVITY; POLYSILICON; QUANTUM EFFICIENCY;

ELECTRONIC SHUTTER TECHNOLOGY; METAL STRAPPING; POLYSILICON GATE ELECTRODES;

CHARGE COUPLED DEVICES;

EID: 0035714870     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979570     Document Type: Article

References (4)

1. An ultra high-speed camera with an in-situ storage image sensor
2. 360×360 element three-phase very high frame rate burst image sensor
3. A VGA ISIS for a video camera of 1,000,000 fps: A proposal
4. Integrated electronic shutter for back-illuminated charge-coupled devices