Electrical characteristics of TiO2/ZrSixOy stack gate dielectric for metal-oxide-semiconductor device applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6803-6804

  Sim, Hyunjun ^a   Jeon, Sanghun ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

EOT; Gate dielectric; MOS; TiO2; Zirconium silicate

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIUM COMPOUNDS;

FLATBAND VOLTAGE; LEAKAGE CURRENT DENSITY; STACK GATE DIELECTRIC; ZIRCONIUM SILICATE;

MOS DEVICES;

EID: 0035712663     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6803     Document Type: Article

References (13)