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Volumn 30, Issue 4, 2001, Pages 189-200

Magnetic field and finite barrier-height effects on the polarizability of a shallow donor in a GaAs quantum wire

Author keywords

Donor; Electric field; GaAs; Impurity; Magnetic field; Polarizability; Quantum well wire

Indexed keywords

APPROXIMATION THEORY; BINDING ENERGY; MAGNETOELECTRIC EFFECTS; PERTURBATION TECHNIQUES; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; VARIATIONAL TECHNIQUES;

EID: 0035712552     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2001.1006     Document Type: Article
Times cited : (37)

References (24)
  • 14
    • 85031475020 scopus 로고    scopus 로고
    • Proceedings of the international conference on semiconductor quantum dots
    • NRS 1-3
    • (2001) Phys. Status Solidi (b) , vol.224


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.