Temperature dependence of THz radiation from semi-insulating InP surface

Journal of Luminescence

Volumn 94-95, Issue , 2001, Pages 627-630

  Nakajima, M ^a   Takahashi, M ^a   Hangyo, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Femtosecond pulse laser; Semiconductor surface; Temperature dependence; THz radiation

Indexed keywords

ELECTRON MOBILITY; HIGH TEMPERATURE EFFECTS; LITHOGRAPHY; SEMICONDUCTING INDIUM PHOSPHIDE; ULTRASHORT PULSES;

FEMTOSECOND LASER PULSES;

RADIATION;

EID: 0035698118     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(01)00351-9     Document Type: Article

References (10)