Influence of electron - Electron interaction on electron distributions in short Si-MOSFETs analysed using the local iterative Monte Carlo technique

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 175-178

  Baksht, Evgenii H ^a   Losev, Valery F ^a   Panchenko, Aleksei N ^a   Panchenko, Yurii N ^a   Tarasenko, Victor F ^a  

^a INSTITUTE OF HIGH CURRENT ELECTRONICS   (Russian Federation)

Author keywords

Device simulation; Electron electron interaction; Local Iterative Monte Carlo; Monte Carlo

Indexed keywords

COMPUTER SIMULATION; ELECTRON SCATTERING; ELECTRON TRANSITIONS; ITERATIVE METHODS; MONTE CARLO METHODS;

LOCAL ITERATIVE MONTE CARLO (LIMO) TECHNIQUES;

MOSFET DEVICES;

EID: 0035695571     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/68217     Document Type: Article

References (15)