Modeling and investigation of instabilities in Heterojunction Interband Tunnel Diodes for microwave applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 1269-1272

  Cidronali, A ^a   Collodi, G ^a   Deshpande, M ^b   Toccafondi, C ^a   El Zein, N ^b   Manes, G ^a   Nair, V ^b   Goronkin, H ^b  

^a UNIVERSITY OF FLORENCE   (Italy)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; MICROWAVES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

HETEROJUNCTION INTERBAND TUNNEL DIODES; NEGATIVE DIFFERENTIAL RESISTANCE;

TUNNEL DIODES;

EID: 0035695419     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967124     Document Type: Article

References (8)

1. Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory
2. A comprehensive DC/RF tunnel diode model and its application to simulate HITFET's (Heterostructure Integrated Tunneling FET's) and Quantum-MMIC's
3. X-band heterostructure interband tunneling FET (HITFET) VCOs
4. Heterojunction interband tunneling FETs: Optimization and use in amplifier circuits
5. Power ans stability limitations of resonant tunnelling diodes
6. Tunneling in a finite superlattice