Edge hole direct tunneling leakage in ultrathin gate oxide p-channel MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 12, 2001, Pages 2790-2795

  Yang, Kuo Nan ^b,c   Huang, Huan Tsung ^a,b,c   Chen, Ming Jer ^a,b   Lin, Yeou Ming ^c   Yu, Mo Chiun ^c   Jang, Simon S M ^c   Yu, Douglas C H ^c   Liang, Mong Song ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Direct tunneling (DT); Edge direct tunneling (EDT); Gate induced drain leakage (GIDL); MOSFETs; Oxide; Surface quantization; Valence band electron tunneling (VBET)

Indexed keywords

EDGE DIRECT TUNNELING (EDT); VALENCE-BAND ELECTRON TUNNELING (VBET);

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; POLYSILICON;

MOSFET DEVICES;

EID: 0035694247     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974705     Document Type: Article

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