Boundary conditions of electrons at the interface. Part II: Internal stresses in thin films

Theoretical and Applied Fracture Mechanics

Volumn 37, Issue 1-3, 2001, Pages 19-27

  Cheng, K J ^a   Cheng, S Y ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; ELECTRON BEAMS; INTERFACES (MATERIALS); RESIDUAL STRESSES;

THOMAS-FERMI-DIRAC (TFD) MODELS;

THIN FILMS;

BOUNDARY CONDITIONS; ELECTRON; FILM THICKNESS; INTERFACE; INTERNAL STRESS;

EID: 0035694061     PISSN: 01678442     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-8442(01)00089-1     Document Type: Article

References (8)

1. Application of TFD model to design of material and Yu's theory
2. Computation of heat of formation and EOS of alloys by the refined model
3. A new method to the calculation of equation of state at null temperature
4. Theoretical foundation of condensed material
5. The theory of dislocations in one-dimensional rows of atoms: Dislocations proper motions and their interactions
6. About the strain field of a dislocation
7. On the theory of plastic deformation
8. The size of dislocation