Harmonic power generation from the non-linear output capacitance of silicon LDMOS devices

IEEE High Frequency Postgraduate Student Colloquium

Volumn , Issue , 2001, Pages 1-6

  Gaddi, Roberto ^a   Pla, Jaime A ^a   Tasker, Paul J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CAPACITANCE; GATES (TRANSISTOR); HARMONIC GENERATION; POWER GENERATION; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TIME DOMAIN ANALYSIS; VARACTORS;

HARMONIC POWER GENERATION; NON-LINEAR OUTPUT CAPACITANCE; VARACTOR DIODE MULTIPLIER;

MOSFET DEVICES;

EID: 0035693874     PISSN: 15466523     EISSN: None     Source Type: Journal    
DOI: 10.1109/HFPSC.2001.962148     Document Type: Article

References (5)

1. 120Watt, 2GHz, Si LDMOS RF power transistor for PCS base station applications
2. High-power time-domain measurement system with active harmonic load-pull for high-efficiency base-station amplifier design
3. LDMOS non-linear electro-thermal model validation from time-domain measurements
4. A new dynamic electro-thermal nonlinear model for silicon RF LDMOS FETs
5. Single barrier varactors for submillimeter wave power generation