Wigner function methods in modeling of switching in resonant tunneling devices

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 221-227

  Grubin, H L ^a   Buggeln, R C ^a  

^a Scientific Research Associates Inc   (United States)

Author keywords

Dissipation; Relaxation oscillations; Wigner function

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; ELECTRON TUNNELING; HYSTERESIS; QUANTUM THEORY; RELAXATION OSCILLATORS; SPURIOUS SIGNAL NOISE; SWITCHING;

RESONANT TUNNELING DEVICES; WIGNER FUNCTION METHODS;

SEMICONDUCTOR DEVICE MODELS;

EID: 0035693151     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/37412     Document Type: Conference Paper

References (11)

1. Density matrix simulations of semiconductor devices
2. Boundaries, transients and multiple barrier devices
3. Transport via the Liouville equation and moments of quantum distribution function
4. Phase noise of a resonant-tunneling relaxation oscillator
5. On the quantum correction for thermodynamic equilibrium
6. Boundary conditions for open system driven far from equilibrium
7. Self-consistent study of the resonant-tunneling diode
8. Transient switching behavior of the resonant tunneling diode
9. The effects of scattering on current-voltage characteristics, transient response, and particle trajectories in the numerical simulation of resonant tunneling diodes