Monte Carlo study of the lateral distribution of gate current density along the channel of submicron LDD MOSFET's

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 301-304

  Harkar, A ^a   Kelsall, R W ^a   Ellis, J N ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Monte Carlo; MOSFET; Statistical enhancement

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; ELECTRONS; MONTE CARLO METHODS; RESONANT TUNNELING; STATISTICAL METHODS;

GATE CURRENT DENSITY; HOT ELECTRONS;

MOSFET DEVICES;

EID: 0035692886     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/61328     Document Type: Article

References (6)

1. Lateral distribution of hot-carrier induced interface traps in MOSFET's
2. Effects of hot carrier induced interface state generation in submicron LDD MOSFET's
3. A comprehensive study of hot-carrier induced interface and oxide trap distribution in MOSFET's using a novel charge pumping technique
4. A new approach for characterizing structure-dependent hot-carrier effects in drain engineered MOSFET's