High efficiency S-band class AB push-pull power amplifier with wide band harmonic suppression

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 1079-1082

  Hang, Cynthia Y ^a   Qian, Yongxi ^a   Itoh, Tatsuo ^a  

^a Engineering IV   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ENERGY GAP; MICROWAVE AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

HARMONIC SUPPRESSION; MICROWAVE POWER AMPLIFIER; PHOTONIC BANDGAP GROUND PLANE; POWER ADDED EFFICIENCY;

POWER AMPLIFIERS;

EID: 0035692281     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. High-efficiency 1-,2-, and 4-W class B FET power amplifiers
2. High-efficiency class F GaAs FET amplifier operating with very low bias voltage for use in mobile telephone at 1.75 GHz
3. Novel architectures for high efficiency amplifiers for wireless applications
4. High efficiency power amplifier with novel PBG ground plane for harmonic tuning
5. A novel low loss slow-wave microstrip structure
6. Characteristics of microstrip lines on a uniplanar compact PBG ground plane