An extended Doherty amplifier with high efficiency over a wide power range

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 931-934

  Iwamoto, Masaya ^a   Williams, Aracely ^a   Chen, Pin Fan ^b   Metzger, Andre ^a   Wang, Chengzhou ^a   Larson, Lawrence E ^a   Asbeck, Peter M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Global Communication Semiconductors   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; ELECTRIC POWER SUPPLIES TO APPARATUS; EQUIVALENT CIRCUITS; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION LINE THEORY;

DEVICE SCALING PARAMETERS; DOHERTY AMPLIFIER; INDIUM GALLIUM PHOSPHIDE; OUTPUT MATCHING CIRCUIT; POWER ADDED EFFICIENCY;

POWER AMPLIFIERS;

EID: 0035692268     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967044     Document Type: Article

References (10)

1. CDMA reverse link open power control
2. A new high efficiency power amplifier for modulated waves
3. Efficiency of doherty RF power-amplifier systems
4. The microwave doherty amplifier
5. A full integrated ku-band doherty amplifier MMIC
6. An 18-21 GHz InP DHBT linear microwave doherty amplifier
7. A 20GHz doherty power amplifier MMIC with high efficiency and low distortion designed for broad band digital communication systems
8. General design equations of three-port unequal power-dividers terminated by arbitrary impedances
9. High-efficiency power amplifier using dynamic power-supply voltage for CDMA applications