A GaAs MESFET transient model capable of predicting trap-induced memory effects under complex digital modulation

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 815-818

  Wang, F ^a   Jemison, W D ^a   Hwang, J C M ^b  

^a LAFAYETTE COLLEGE   (United States)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; MICROWAVES; MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION;

DIGITAL MODULATION; GALLIUM ARSENIDE MESFET; TRAP INDUCED MEMORY EFFECTS;

MESFET DEVICES;

EID: 0035689792     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967016     Document Type: Article

References (6)

1. Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena
2. Frequency-dependent electrical characteristics of GaAs MESFET's
3. Characterization and modeling of nonlinear trapping effects in power SiC MESFETs
4. A physically-based transient SPICE model for GaAs MESFET's
5. A physically-based transient SPICE model for digitally-modulated RF characteristics of ion-implanted GaAs MESFET's
6. An improved low frequency transient model extraction procedure for GaAs MESFET's