High isolation V-band SPDT switch MMIC for high power use

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2001, Pages 245-248

  Shimura, Tadayuki ^a   Mimino, Yutaka ^a   Nakamura, Kannichi ^a   Aoki, Yoshio ^a   Kuroda, Shigeru ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LINES; HIGH ELECTRON MOBILITY TRANSISTORS; INSERTION LOSSES; SCHOTTKY BARRIER DIODES; SWITCHING CIRCUITS;

BROADBAND FREQUENCY RANGE; DISTRIBUTED SHUNT DIODES; SINGLE POLE DOUBLE THROW SWITCH;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035689711     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. A sub-nanosecond resonant-type monolithic T/R switch for millimeter-wave systems applications
2. A high performance v-band monolithic fet transmit-receive switch
3. A programmable high isolation monolithic millimeter-wave SPST switch
4. 77GHz monolithic MMIC schottky- and PIN-diode switches based on GaAs MESFET and silicon SIMMWIC technology
5. Coplanar W-band SPDT and SPTT resonanted PIN diode switches
6. High gain-density k-band p-hemt LNA MMIC for LMDS and satellite communication