200, 400 and 800 GHz Schottky diode “substrateless” multipliers: Design and results

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1649-1652

  Schlecht, E ^a   Chattopadhyay, G ^a   Maestrini, A ^a   Fung, A ^a   Martin, S ^a   Pukala, D ^a   Bruston, J ^b   Mehdi, I ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LINES; ELECTRIC LOSSES; NETWORKS (CIRCUITS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

SCHOTTKY DIODE MULTIPLIERS; SUBMILLIMETER DOUBLER CIRCUITS; SUBSTRATELESS TECHNOLOGY;

SEMICONDUCTOR DIODES;

EID: 0035683135     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967221     Document Type: Article

References (8)

1. Scientific drivers for future high-resolution far-infrared spectroscopy in space
2. The FIRST mission
3. The HIFI heterodyne instrument for FIRST: Capabilities and performance
4. Development of millimeter and submillimeter-wave local oscillator circuits for a space telescope
5. A high-power millimeter-wave frequency doubler using a planar diode array
6. Diode frequency multipliers for terahertz local oscillator applications
7. 200 and 400 Ghz Schottky diode multipliers fabricated with integrated air-dielectric 'substrateless' circuitry
8. Cryogenic operation of GaAs based multiplier chains to 400 GHz