Low jitter silicon bipolar based VCOs for applications in high speed optical communication systems

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1567-1570

  Khanna, A P S ^a   Topacio, Ed ^a   Gane, Ed ^a   Elad, Danny ^b  

^a AGILENT TECHNOLOGIES   (United States)

^b Rafael ^*  (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; JITTER; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

FREQUENCY MULTIPLIER; LOW NOISE SILICON BIPOLAR TRANSISTOR; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0035683079     PISSN: 0149645X     EISSN: None     Source Type: Journal    
DOI: 10.1109/MWSYM.2001.967202     Document Type: Article

References (5)

1. 47 GHz SiGe-MMIC oscillator
2. A highly stable 36 GHz GaAs FET DRO with phase lock capability
3. 18-40 GHz 13 dBm low noise GaAs FET YIG tuned oscillator
4. Fast-settling, low noise Ku band fundamental bipolar VCO
5. HMMC-5040 as a 20-40 GHz multiplier