Broad-band erbium-doped fiber amplifier with double-pass configuration

IEEE Photonics Technology Letters

Volumn 13, Issue 12, 2001, Pages 1289-1291

  Hwang, Seongtaek ^a   Song, Kwan Woong ^a   Kwon, Hyung Jin ^a   Koh, Junho ^a   Oh, Yun Je ^a   Cho, Kyuman ^b  

^a SAMSUNG Electronics   (South Korea)

^b Sogang University   (South Korea)

Author keywords

C band; Erbium doped fiber amplifier; Fiber reflector; L band

Indexed keywords

BROADBAND AMPLIFIERS; GAIN MEASUREMENT; SEMICONDUCTOR DOPING; SIGNAL TO NOISE RATIO; WAVELENGTH DIVISION MULTIPLEXING;

ERBIUM DOPED FIBER AMPLIFIERS; FIBER REFLECTORS;

FIBER LASERS;

EID: 0035679581     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.969884     Document Type: Article

References (10)

1. 1-THz-spaced multi-wavelength pumping for broadband Raman amplifiers
2. Wide-band and gain-flattened hybrid fiber amplifier consisting of an EDFA and a multiwavelength pumped Raman amplifier
3. Gain-flattened tellurite-based EDFA with a flat amplification bandwidth of 76nm
4. Wideband erbium-doped fiber amplifiers with three-stage amplification
5. 3+-doped fiber amplifier in a parallel configuration
6. Coupled structure for wide-band EDFA with gain and noise figure improvements from C to L-band ASE injection
7. 80 nm ultra-wideband erbium-doped silica fiber amplifier
8. 3+ doped fiber amplifier operating at wavelengths of 1.55 and 1.60μm
9. 3+-doped fiber amplifier for conventional- and long-wavelength bands
10. 75 nm of continuous gain using a novel EDFA topology