SCOPUS 정보 검색 플랫폼

Volumn 308-310, Issue , 2001, Pages 565-568

Transition metals in diamond: Do chemical trends arise from ab initio calculations?

Author keywords

Diamond; Stability; Transition metals

Indexed keywords

COMPUTER SIMULATION; CRYSTAL IMPURITIES; ENTHALPY; ENTROPY; MATHEMATICAL MODELS; POINT DEFECTS; SOLUBILITY; STRAIN; TRANSITION METALS;

SOLVATION;

SEMICONDUCTING DIAMONDS;

EID: 0035678857 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(01)00734-7 Document Type: Article

Times cited : (14)

References (15)

2
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6
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- Identification of defects in semiconductors
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- (1998) Semiconductors and Semimetals , vol.51 A
- Jones, R.¹ Briddon, P.R.²

8
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- (1978) Philos. Mag. B , vol.37 , pp. 255
- Mainwood, A.¹ Stoneham, A.M.²

10
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- (1956) Solid State Physics, Advances in Research and Applications , vol.3 , pp. 79
- Eshelby, J.D.¹

14
- 0003496090
- Oxford University Press, Oxford
- (1955) Dynamical Theory of Crystal Lattices
- Born, M.¹ Huang, K.²

15
- 0004893209
- The optical properties of luminescence centres in silicon
- (1989) Physics Reports , vol.176
- Davies, G.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.