Study of vacancy-type defects after Cu diffusion in GaAs

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 792-795

  Bondarenko, V ^a   Petters, K ^a   Krause Rehberg, R ^a   Gebauer, J ^a   Leipner, H S ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

Author keywords

Cu diffusion; GaAs; Positron annihilation; TEM; Vacancy clusters

Indexed keywords

ANNEALING; COPPER; CRYSTAL DEFECTS; DIFFUSION; POSITRONS; QUENCHING; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PRESSURE;

VACANCY CLUSTERS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035669111     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00805-5     Document Type: Article

References (6)