The ground state of silicon vacancies in 6H-SiC and 15R-SiC

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 649-651

  Lingner, Th ^a   Greulich Weber, S ^a   Spaeth, J M ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

Electron paramagnetic resonance; Magnetic circular dichroism of the absorption; Silicon carbide; Vacancies

Indexed keywords

ABSORPTION; CRYSTAL LATTICES; ELECTRON IRRADIATION; GROUND STATE; PARAMAGNETIC RESONANCE; PHOTOLUMINESCENCE; PHOTONS; POINT DEFECTS;

OPTICAL TRANSITIONS;

SILICON CARBIDE;

EID: 0035669051     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00778-5     Document Type: Article

References (6)

1. Structural analysis of point defects in solids